Microsemi Corp. Bipolar Transistors - BJT 2N3635L/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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The 2N3635L is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 140 Vdc and a collector current of 1.0 Adc. It has a total power dissipation of 1.0 W at +25°C and operates within a junction temperature range of -65 to +200°C. The device meets MIL-PRF-19500/357 qualification standards. Its forward current transfer ratio ranges from 55 to 300 at collector currents of 0.1 mA to 50 mA, with a collector-emitter saturation voltage of up to 0.6 Vdc at 50 mA collector and 5 mA base current. Input capacitance is 75 pF, and output capacitance is 10 pF under specified test conditions.

Datasheet Summary
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The 2N3635L is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 140 Vdc and a collector current of 1.0 Adc. It has a total power dissipation of 1.0 W at +25°C and operates within a junction temperature range of -65 to +200°C. The device meets MIL-PRF-19500/357 qualification standards. Its forward current transfer ratio ranges from 55 to 300 at collector currents of 0.1 mA to 50 mA, with a collector-emitter saturation voltage of up to 0.6 Vdc at 50 mA collector and 5 mA base current. Input capacitance is 75 pF, and output capacitance is 10 pF under specified test conditions.

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Bipolar Transistors - BJT
2N3635L/TR
Bipolar Transistors - BJT 2N3635L/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3635L/TR
Product Name Bipolar Transistors - BJT
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