Microsemi Corp. Bipolar Transistors - BJT 2N3499L/TR

The 2N3499L is an NPN silicon transistor designed for high-reliability, medium-power applications requiring high-frequency switching. It is available in a TO-5 package, with a hermetically sealed kovar base and nickel cap, measuring 7.75-8.51 mm in diameter and 38.1-44.5 mm in lead length. The device has a collector-emitter voltage rating of 100 V, a collector current of 500 mA, and operates within a junction temperature range of -65 to +200 °C. Thermal resistance junction-to-ambient is 175 °C/W, and junction-to-case is 30 °C/W. It meets MIL-PRF-19500/366 qualifications for JAN, JANTX, JANTXV, and JANS reliability levels. RoHS-compliant versions are available for commercial grade. Electrical characteristics include a DC current gain (hFE) of 20 to 120 at 150 mA and a collector-emitter saturation voltage of 0.2 V at 10 mA collector current.