Microsemi Corp. Bipolar Transistors - BJT 2N3019S/TR

The 2N3019S/TR is a low-power NPN silicon transistor in a short-leaded TO-39 package, qualified for high-reliability military applications per MIL-PRF-19500/391. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V. The maximum collector current is 1.0 A, with a total power dissipation of 0.8 W at 25 °C ambient temperature. Thermal resistance junction-to-ambient is 195 °C/W, and junction-to-case is 30 °C/W. The transistor features a minimum DC current gain of 15 at 1.0 A collector current and a forward current transfer ratio ranging from 15 to 300 across operating conditions. The case is hermetically sealed with a kovar base and nickel cap, and the device is RoHS compliant by design. Weight is approximately 1.064 grams.