Microsemi Corp. Bipolar Transistors - BJT 2N2907AL/TR

The 2N2907AL/TR is a PNP small signal silicon transistor in a TO-18 package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current capacity of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device operates over a junction temperature range of -65°C to +200°C. The forward current transfer ratio (hFE) ranges from 75 to 450 at collector currents of 1.0 mA to 150 mA, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector current and 15 mA base current. It meets MIL-PRF-19500/291 qualification standards. The TO-18 package has a body height of 0.209 to 0.230 inches and lead dimensions consistent with industry-standard TO-206AA form factor.