Microsemi Corp. Bipolar Transistors - BJT 2N2906AUA

The 2N2906AUA is a PNP silicon small signal transistor in a surface mount package with a ceramic lid, qualified to JANTXV level per MIL-PRF-19500/291. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The minimum forward current transfer ratio is 40 at 1 mA collector current and 10 V collector-emitter voltage. The collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current. Input and output capacitances are 30 pF and 8.0 pF respectively. The operating and storage junction temperature range is -65°C to +200°C.