Microsemi Corp. Bipolar Transistors - BJT 2N2904A/TR

The 2N2904A/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) hermetically sealed package, designed for high-reliability and general-purpose switching applications. It has a collector-emitter voltage rating of 60 V, a collector current of 600 mA, and a total power dissipation of 0.3 W at 25 °C ambient temperature. The thermal resistance junction-to-case is 50 °C/W and junction-to-ambient is 195 °C/W. Operating and storage junction temperature ranges from -65 °C to +200 °C. It meets MIL-PRF-19500/290 qualifications for JANTX and JANTXV levels, and is available in RoHS-compliant form. The device features a minimum DC current gain (hFE) of 40 at 10 mA collector current and 10 V collector-emitter voltage, with turn-on and turn-off times of 45 ns and 300 ns respectively.