Microsemi Corp. Bipolar Transistors - BJT 2N2484/TR

2N2484/TR is an NPN silicon low-power transistor in a TO-18 (TO-206AA) package, qualified per MIL-PRF-19500/376. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 50 mAdc, and a total power dissipation of 360 mW at 25°C. The junction temperature range is -65 to +200°C with a thermal resistance of 325°C/W. Electrical characteristics include a minimum forward current transfer ratio of 45 at 1.0 μA collector current and 5.0 V collector-emitter voltage, and a collector-emitter saturation voltage of 0.3 V at 1.0 mA collector current and 100 μA base current. The input capacitance is 6.0 pF and output capacitance is 5.0 pF under specified conditions.