Microsemi Corp. Bipolar Transistors - BJT 2N2222Ae3

NPN silicon switching transistor in a TO-18 package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/255 qualification standards with an operating and storage junction temperature range of -65 to +200°C. Forward current transfer ratio ranges from 100 to 300 at collector current of 150 mA and collector-emitter voltage of 10 V. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Input capacitance is 25 pF, and output capacitance is 8.0 pF. Turn-on time is 35 μs and turn-off time is 300 μs.