Microsemi Corp. Bipolar Transistors - BJT 2N1890S

The 2N1890S is an NPN low power silicon transistor in a TO-5 package, qualified per MIL-PRF-19500/225 for JAN and JANTX levels. It has a collector-base voltage rating of 100 Vdc, an emitter-base voltage of 7.0 Vdc, and a maximum collector current of 500 mAdc. Total power dissipation is 0.8 W at +25°C and 3.0 W with heatsinking. The thermal impedance is 58°C/W. The forward-current transfer ratio ranges from 50 to 300 at collector currents of 500 mA and 150 mA respectively. Collector-emitter saturation voltage is 5.0 V at 150 mA collector current and 15 mA base current. The device operates across a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/225 qualification standards.