Micron Technology, Inc. Memory PZ28F064M29EWBA

Description
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 48-BGA (6x8)
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Description
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 48-BGA (6x8)
Request a Quote
Datasheet
Datasheet Summary
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The PZ28F064M29EWBA is a 64Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random or page read capabilities with a page access time of 25ns. The device supports a maximum program buffer of 256 words and offers fast programming times, achieving up to 3.2 MB/s when using the buffer with V_{PPH}. Memory organization includes 128 main blocks of 64KB each, with options for boot blocks. The product features a program/erase controller with embedded algorithms, and it supports program/erase suspend and resume operations, allowing for read or program actions on different blocks during these processes. It also includes a blank check operation for verifying erased blocks and various protection features, including software protection and a permanent secure identification block. The PZ28F064M29EWBA is compliant with JESD47H standards, ensuring a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm single-bit cell process technology and is available in a 48-ball BGA package that is RoHS-compliant and halogen-free. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.

Datasheet Summary
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The PZ28F064M29EWBA is a 64Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, and features asynchronous random or page read capabilities with a page access time of 25ns. The device supports a maximum program buffer of 256 words and offers fast programming times, achieving up to 3.2 MB/s when using the buffer with V_{PPH}. Memory organization includes 128 main blocks of 64KB each, with options for boot blocks. The product features a program/erase controller with embedded algorithms, and it supports program/erase suspend and resume operations, allowing for read or program actions on different blocks during these processes. It also includes a blank check operation for verifying erased blocks and various protection features, including software protection and a permanent secure identification block. The PZ28F064M29EWBA is compliant with JESD47H standards, ensuring a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm single-bit cell process technology and is available in a 48-ball BGA package that is RoHS-compliant and halogen-free. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - PZ28F064M29EWBA-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 48-BGA (6x8)

FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 48-BGA (6x8)

Buy Now Datasheet
Memory - Flash - PZ28F064M29EWBA - 042257-PZ28F064M29EWBA - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - PZ28F064M29EWBA
042257-PZ28F064M29EWBA
Memory - Flash - PZ28F064M29EWBA 042257-PZ28F064M29EWBA
Manufacturer: Micron Technology Inc. Win Source Part Number: 042257-PZ28F064M29EW BA Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Access Time: 60ns Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-BGA (6x8) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Win Source Part Number: 042257-PZ28F064M29EWBA
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Access Time: 60ns
Categories: Integrated Circuits
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-BGA (6x8)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-PZ28F064M29EWBA - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-PZ28F064M29EWBA
Memory IC and Storage Component 774-PZ28F064M29EWBA
IC FLASH 64MBIT PARALLEL 48BGA Product overview: PZ28F064M29EWBA from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PZ28F064M29EWBA can be used for catalog matching and distributor lookup.

IC FLASH 64MBIT PARALLEL 48BGA Product overview: PZ28F064M29EWBA from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PZ28F064M29EWBA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - PZ28F064M29EWBA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PZ28F064M29EWBA
Integrated Circuits (ICs) - Memory - Memory PZ28F064M29EWBA
IC FLASH 64MBIT PARALLEL 48BGA

IC FLASH 64MBIT PARALLEL 48BGA

Supplier's Site
Memory - PZ28F064M29EWBA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-BGA (6x8)

FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-BGA (6x8)

Buy Now Datasheet
IC FLASH 64MBIT PARALLEL 48BGA

IC FLASH 64MBIT PARALLEL 48BGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PZ28F064M29EWBA-ND 042257-PZ28F064M29EWBA 774-PZ28F064M29EWBA PZ28F064M29EWBA PZ28F064M29EWBA PZ28F064M29EWBA
Product Name Memory Memory - Flash - PZ28F064M29EWBA Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 48-VFBGA BGA; 48-BGA (6x8) BGA; Tray BGA; 48-VFBGA
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