Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory PN28F256M29EWHD TR

Description
IC FLASH 256MBIT PARALLEL
Description
IC FLASH 256MBIT PARALLEL

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PN28F256M29EWHD TR
Integrated Circuits (ICs) - Memory - Memory PN28F256M29EWHD TR
IC FLASH 256MBIT PARALLEL

IC FLASH 256MBIT PARALLEL

Supplier's Site
IC FLASH 256MBIT PARALLEL VFBGA

IC FLASH 256MBIT PARALLEL VFBGA

Supplier's Site
Memory - PN28F256M29EWHD TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 100 ns

FLASH - NOR Memory IC 256Mbit Parallel 100 ns

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number PN28F256M29EWHD TR PN28F256M29EWHD TR PN28F256M29EWHD TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 100 ns
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL116K0XMFIS11-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits
View Details
3 suppliers
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - IS25WQ040-JULE-TR - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 4000 kbits
View Details