Micron Technology, Inc. Memory PN28F256M29EWHD TR

Description
IC FLASH 256MBIT PARALLEL VFBGA
Description
IC FLASH 256MBIT PARALLEL VFBGA

Suppliers

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Product
Description
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IC FLASH 256MBIT PARALLEL VFBGA

IC FLASH 256MBIT PARALLEL VFBGA

Supplier's Site
Memory - PN28F256M29EWHD TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 100 ns

FLASH - NOR Memory IC 256Mbit Parallel 100 ns

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
PN28F256M29EWHD TR
Integrated Circuits (ICs) - Memory - Memory PN28F256M29EWHD TR
IC FLASH 256MBIT PARALLEL

IC FLASH 256MBIT PARALLEL

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number PN28F256M29EWHD TR PN28F256M29EWHD TR PN28F256M29EWHD TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 100 ns 100 ns
Density 256000 kbits 256000 kbits 256000 kbits
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