Micron Technology, Inc. Memory PC28F512P33EF0

Description
FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F512P33EF0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)

Buy Now Datasheet
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number PC28F512P33EF0 PC28F512P33EF0
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 95 ns 95 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

SmartMedia Cards - 7723176 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64 kbits
View Details
 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 1 kbits
View Details