Micron Technology, Inc. Memory PC28F512P33EF0

Description
IC FLASH 512MBIT PAR 64EASYBGA
Datasheet
Description
IC FLASH 512MBIT PAR 64EASYBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet
Memory - PC28F512P33EF0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 95 ns 64-EasyBGA (8x10)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number PC28F512P33EF0 PC28F512P33EF0
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 95 ns 95 ns
Density 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQ-AA/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type WQFN48
View Details
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - S25FL116K0XBHIS20 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 16000 kbits
View Details
2 suppliers