Micron Technology, Inc. Memory PC28F512P30BFB TR

Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F512P30BFBTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52MHz 100ns 64-EasyBGA (8x10)

Buy Now Datasheet
Memory - Flash - PC28F512P30BFB TR - 791414-PC28F512P30BFB TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - PC28F512P30BFB TR
791414-PC28F512P30BFB TR
Memory - Flash - PC28F512P30BFB TR 791414-PC28F512P30BFB TR
Manufacturer: Micron Technology Inc. Win Source Part Number: 791414-PC28F512P30BF B TR Series: Axcell Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 64-TBGA Mounting: SMD Technology: FLASH - NOR Operating Supply Voltage: 1.7 V ~ 2 V Memory Type: Non-Volatile Memory Size: 512Mb (32M x 16) Access Time: 100ns Categories: Integrated Circuits (ICs) Memory Format: FLASH Clock Frequency: 52MHz Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Manufacturer Package: 64-EasyBGA (8x10) Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Win Source Part Number: 791414-PC28F512P30BFB TR
Series: Axcell
Packaging: Reel package
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 64-TBGA
Mounting: SMD
Technology: FLASH - NOR
Operating Supply Voltage: 1.7 V ~ 2 V
Memory Type: Non-Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 100ns
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Manufacturer Package: 64-EasyBGA (8x10)
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory IC and Storage Component - 774-PC28F512P30BFB TR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-PC28F512P30BFB TR
Memory IC and Storage Component 774-PC28F512P30BFB TR
IC FLASH 512MBIT PAR 64EASYBGA Product overview: PC28F512P30BFB TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PC28F512P30BFB TR can be used for catalog matching and distributor lookup.

IC FLASH 512MBIT PAR 64EASYBGA Product overview: PC28F512P30BFB TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-PC28F512P30BFB TR can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - PC28F512P30BFB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 100 ns 64-EasyBGA (8x10)

FLASH - NOR Memory IC 512Mbit Parallel 52 MHz 100 ns 64-EasyBGA (8x10)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F512P30BFB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F512P30BFB TR
Integrated Circuits (ICs) - Memory - Memory PC28F512P30BFB TR
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site
IC FLASH 512MBIT PAR 64EASYBGA

IC FLASH 512MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F512P30BFBTR-ND 791414-PC28F512P30BFB TR 774-PC28F512P30BFB TR PC28F512P30BFB TR PC28F512P30BFB TR PC28F512P30BFB TR
Product Name Memory Memory - Flash - PC28F512P30BFB TR Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 64-TBGA BGA; Tape & Reel (TR) BGA; 64-TBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C010-55DM/B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 55 ns
Density 1000 kbits
View Details
2 suppliers
Ic, Flash Mem, 4Mbit, 90Ns, 32-Tsop; Flash Memory Type Cypress Infineon Technologies - 42K8306 - Newark, An Avnet Company
Specs
Memory Category Flash
Density 4000 kbits
Package Type TSOP
View Details
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details