Micron Technology, Inc. IT infrastructure Memory PC28F128P30BF65E

Description
Category: IT infrastructure Memory Win Source Part Number: 1452329-PC28F128P30B F65E Manufacturer: Micron Technology Inc.
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Description
Category: IT infrastructure Memory Win Source Part Number: 1452329-PC28F128P30B F65E Manufacturer: Micron Technology Inc.
Request a Quote
Datasheet
Datasheet Summary
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The PC28F128P30BF65E is a 128-Mbit NOR Flash memory device from Quarktwin Technology Ltd., featuring a high-performance architecture with a 65ns initial access time for Easy BGA and 75ns for TSOP packages. It supports a variety of read modes, including an 8-word asynchronous-page read mode and a synchronous-burst read mode at 52MHz with zero WAIT states. The device operates with a core voltage range of 1.7V to 2.0V and an I/O voltage range of 1.7V to 3.6V, with a typical standby current of 30¬µA. The memory architecture includes four 32-KByte parameter blocks and 128-KByte array blocks, allowing for flexible data management. Enhanced security features include absolute write protection, individual block locking, and a password access feature. The device is packaged in multiple formats, including 56-Lead TSOP and 64-Ball Easy BGA, and is compliant with JESD47E standards for quality and reliability, supporting a minimum of 100,000 erase cycles. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.

Datasheet Summary
Powered by GS/AI

The PC28F128P30BF65E is a 128-Mbit NOR Flash memory device from Quarktwin Technology Ltd., featuring a high-performance architecture with a 65ns initial access time for Easy BGA and 75ns for TSOP packages. It supports a variety of read modes, including an 8-word asynchronous-page read mode and a synchronous-burst read mode at 52MHz with zero WAIT states. The device operates with a core voltage range of 1.7V to 2.0V and an I/O voltage range of 1.7V to 3.6V, with a typical standby current of 30¬µA. The memory architecture includes four 32-KByte parameter blocks and 128-KByte array blocks, allowing for flexible data management. Enhanced security features include absolute write protection, individual block locking, and a password access feature. The device is packaged in multiple formats, including 56-Lead TSOP and 64-Ball Easy BGA, and is compliant with JESD47E standards for quality and reliability, supporting a minimum of 100,000 erase cycles. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1452329-PC28F128P30BF65E - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1452329-PC28F128P30BF65E
IT infrastructure Memory 1452329-PC28F128P30BF65E
Category: IT infrastructure Memory Win Source Part Number: 1452329-PC28F128P30B F65E Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Win Source Part Number: 1452329-PC28F128P30BF65E
Manufacturer: Micron Technology Inc.

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Memory - PC28F128P30BF65E-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 52MHz 65ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 128Mb (8M x 16) Parallel 52MHz 65ns 64-EasyBGA (10x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F128P30BF65E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F128P30BF65E
Integrated Circuits (ICs) - Memory - Memory PC28F128P30BF65E
IC FLASH 128MBIT PAR 64EASYBGA

IC FLASH 128MBIT PAR 64EASYBGA

Supplier's Site
IC FLASH 128MBIT PAR 64EASYBGA

IC FLASH 128MBIT PAR 64EASYBGA

Supplier's Site Datasheet
Memory - PC28F128P30BF65E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 52 MHz 65 ns 64-EasyBGA (10x13)

FLASH - NOR Memory IC 128Mbit Parallel 52 MHz 65 ns 64-EasyBGA (10x13)

Buy Now Datasheet
IC FLASH 128MBIT PAR 64EASYBGA

IC FLASH 128MBIT PAR 64EASYBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd. ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1452329-PC28F128P30BF65E PC28F128P30BF65E-ND PC28F128P30BF65E PC28F128P30BF65E PC28F128P30BF65E PC28F128P30BF65E
Product Name IT infrastructure Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory Memory
Memory Category Flash Flash Flash; Non-Volatile Flash; Flash Flash; FLASH Flash; FLASH - NOR
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 64-TBGA BGA; 64-TBGA 64-TBGA
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