Micron Technology, Inc. Memory PC28F128M29EWHX

The PC28F128M29EWHX is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers functioning at 1.65,Äì3.6V. The memory supports asynchronous random and page read modes, with a page size of 8 words (16 bytes) and a page access time of 25ns. Random access times are specified at 60ns for BGA packages and 70ns for TSOP packages. This memory device features a 256-word maximum program buffer, allowing for efficient programming with a typical program time of 0.56¬µs per byte without V_{PPH} and 0.31¬µs per byte with V_{PPH}. It includes a program/erase controller with embedded algorithms and supports program/erase suspend and resume capabilities. The device is designed for low power consumption and has a standby mode. The PC28F128M29EWHX is compliant with JESD47H standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It utilizes 65nm single-bit cell process technology and is available in various package options, including a 64-ball BGA and a 56-pin TSOP, both of which are RoHS-compliant and halogen-free. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.