Micron Technology, Inc. Memory PC28F128M29EWHX

Description
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 60ns 64-FBGA (11x13)
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Description
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 60ns 64-FBGA (11x13)
Request a Quote
Datasheet
Datasheet Summary
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The PC28F128M29EWHX is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers functioning at 1.65,Äì3.6V. The memory supports asynchronous random and page read modes, with a page size of 8 words (16 bytes) and a page access time of 25ns. Random access times are specified at 60ns for BGA packages and 70ns for TSOP packages. This memory device features a 256-word maximum program buffer, allowing for efficient programming with a typical program time of 0.56¬µs per byte without V_{PPH} and 0.31¬µs per byte with V_{PPH}. It includes a program/erase controller with embedded algorithms and supports program/erase suspend and resume capabilities. The device is designed for low power consumption and has a standby mode. The PC28F128M29EWHX is compliant with JESD47H standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It utilizes 65nm single-bit cell process technology and is available in various package options, including a 64-ball BGA and a 56-pin TSOP, both of which are RoHS-compliant and halogen-free. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.

Datasheet Summary
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The PC28F128M29EWHX is a 128Mb embedded parallel NOR Flash memory from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers functioning at 1.65,Äì3.6V. The memory supports asynchronous random and page read modes, with a page size of 8 words (16 bytes) and a page access time of 25ns. Random access times are specified at 60ns for BGA packages and 70ns for TSOP packages. This memory device features a 256-word maximum program buffer, allowing for efficient programming with a typical program time of 0.56¬µs per byte without V_{PPH} and 0.31¬µs per byte with V_{PPH}. It includes a program/erase controller with embedded algorithms and supports program/erase suspend and resume capabilities. The device is designed for low power consumption and has a standby mode. The PC28F128M29EWHX is compliant with JESD47H standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It utilizes 65nm single-bit cell process technology and is available in various package options, including a 64-ball BGA and a 56-pin TSOP, both of which are RoHS-compliant and halogen-free. The operating temperature range is from -40¬8C to +85¬8C, making it suitable for a variety of applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F128M29EWHX-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 60ns 64-FBGA (11x13)

FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Parallel 60ns 64-FBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 1020639-PC28F128M29EWHX - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1020639-PC28F128M29EWHX
Integrated Circuits (ICs) - Memory 1020639-PC28F128M29EWHX
Win Source Part Number: 1020639-PC28F128M29E WHX Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 184 Mounting: SMD (SMT) Technology: FLASH - NOR Memory Type: Non-Volatile Memory Size: 128Mb (16M x 8, 8M x 16) Access Time: 60 ns Voltage - Supply: 2.7V ~ 3.6V Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 49 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Micron Technology Inc. Other Names: 183646,-PC28F128M29E WHX-QS,-PC28F128M29E WHX Base Product Number: PC28F128M29 Product Status: Obsolete

Win Source Part Number: 1020639-PC28F128M29EWHX
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 184
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 128Mb (16M x 8, 8M x 16)
Access Time: 60 ns
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
ECCN: 3A991B1A
Fake Threat In the Open Market: 49 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Micron Technology Inc.
Other Names: 183646,-PC28F128M29EWHX-QS,-PC28F128M29EWHX
Base Product Number: PC28F128M29
Product Status: Obsolete

Buy Now Datasheet
Memory - PC28F128M29EWHX - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 60 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 128Mbit Parallel 60 ns 64-FBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F128M29EWHX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F128M29EWHX
Integrated Circuits (ICs) - Memory - Memory PC28F128M29EWHX
IC FLASH 128MBIT PARALLEL 64FBGA

IC FLASH 128MBIT PARALLEL 64FBGA

Supplier's Site
IC FLASH 128MBIT PARALLEL 64FBGA

IC FLASH 128MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F128M29EWHX-ND 1020639-PC28F128M29EWHX PC28F128M29EWHX PC28F128M29EWHX PC28F128M29EWHX
Product Name Memory Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 64-LBGA BGA; 64-LBGA
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