Micron Technology, Inc. Memory PC28F064M29EWTY TR

The PC28F064M29EWTY TR is a 64Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers functioning at 1.65,Äì3.6V. The device supports asynchronous random and page read access, with a page size of 8 words (16 bytes) and a page access time of 25ns. Random access times are specified at 60ns for BGA packages and 70ns for TSOP packages. This memory device features a 256-word maximum program buffer, with program times of 0.56¬µs per byte (1.8 MB/s typical) without V_{PPH} and 0.31¬µs per byte (3.2 MB/s typical) with V_{PPH}. The memory organization includes 128 main blocks of 64KB each, or eight 8KB boot blocks and 127 main blocks for flexibility in design. The PC28F064M29EWTY TR includes a program/erase controller with embedded algorithms, and it supports program/erase suspend and resume capabilities. It also features a BLANK CHECK operation, fast buffered programming, and various protection mechanisms including software protection and password access. The device is compliant with JESD47H standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. The product is available in a 64-ball BGA package and is RoHS-compliant and halogen-free, making it suitable for environmentally conscious designs. Operating temperature ranges from -40¬8C to +85¬8C, ensuring reliability in diverse applications.