Micron Technology, Inc. Memory PC28F064M29EWTY TR

Description
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 64-FBGA (11x13)
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Description
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 64-FBGA (11x13)
Request a Quote
Datasheet
Datasheet Summary
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The PC28F064M29EWTY TR is a 64Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers functioning at 1.65,Äì3.6V. The device supports asynchronous random and page read access, with a page size of 8 words (16 bytes) and a page access time of 25ns. Random access times are specified at 60ns for BGA packages and 70ns for TSOP packages. This memory device features a 256-word maximum program buffer, with program times of 0.56¬µs per byte (1.8 MB/s typical) without V_{PPH} and 0.31¬µs per byte (3.2 MB/s typical) with V_{PPH}. The memory organization includes 128 main blocks of 64KB each, or eight 8KB boot blocks and 127 main blocks for flexibility in design. The PC28F064M29EWTY TR includes a program/erase controller with embedded algorithms, and it supports program/erase suspend and resume capabilities. It also features a BLANK CHECK operation, fast buffered programming, and various protection mechanisms including software protection and password access. The device is compliant with JESD47H standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. The product is available in a 64-ball BGA package and is RoHS-compliant and halogen-free, making it suitable for environmentally conscious designs. Operating temperature ranges from -40¬8C to +85¬8C, ensuring reliability in diverse applications.

Datasheet Summary
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The PC28F064M29EWTY TR is a 64Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers functioning at 1.65,Äì3.6V. The device supports asynchronous random and page read access, with a page size of 8 words (16 bytes) and a page access time of 25ns. Random access times are specified at 60ns for BGA packages and 70ns for TSOP packages. This memory device features a 256-word maximum program buffer, with program times of 0.56¬µs per byte (1.8 MB/s typical) without V_{PPH} and 0.31¬µs per byte (3.2 MB/s typical) with V_{PPH}. The memory organization includes 128 main blocks of 64KB each, or eight 8KB boot blocks and 127 main blocks for flexibility in design. The PC28F064M29EWTY TR includes a program/erase controller with embedded algorithms, and it supports program/erase suspend and resume capabilities. It also features a BLANK CHECK operation, fast buffered programming, and various protection mechanisms including software protection and password access. The device is compliant with JESD47H standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. The product is available in a 64-ball BGA package and is RoHS-compliant and halogen-free, making it suitable for environmentally conscious designs. Operating temperature ranges from -40¬8C to +85¬8C, ensuring reliability in diverse applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - PC28F064M29EWTYTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 64-FBGA (11x13)

FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 60ns 64-FBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F064M29EWTY TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F064M29EWTY TR
Integrated Circuits (ICs) - Memory - Memory PC28F064M29EWTY TR
IC FLASH 64MBIT PARALLEL 64FBGA

IC FLASH 64MBIT PARALLEL 64FBGA

Supplier's Site
IC FLASH 64MBIT PARALLEL 64FBGA

IC FLASH 64MBIT PARALLEL 64FBGA

Supplier's Site Datasheet
Memory - PC28F064M29EWTY TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 60 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 64Mbit Parallel 60 ns 64-FBGA (11x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number PC28F064M29EWTYTR-ND PC28F064M29EWTY TR PC28F064M29EWTY TR PC28F064M29EWTY TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Flash Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 64-LBGA BGA; 64-LBGA
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