Micron Technology, Inc. IT infrastructure Memory PC28F00AM29EWLE

Description
Category: IT infrastructure Memory Win Source Part Number: 1452926-PC28F00AM29E WLE Manufacturer: Micron Technology Inc.
Request a Quote
Description
Category: IT infrastructure Memory Win Source Part Number: 1452926-PC28F00AM29E WLE Manufacturer: Micron Technology Inc.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The PC28F00AM29EWLE is a 1Gb Embedded Parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers requiring a voltage of 1.65,ÄìV_{CC}. The device features asynchronous random and page read capabilities, with a page size of 16 words (32 bytes) and a page access time of 25ns. Random access times are specified at 100ns for the fortified BGA package and 110ns for the TSOP package. This memory device includes a 512-word program buffer, allowing for a typical program time of 0.88¬µs per byte when utilizing the full buffer size. It supports uniform block memory organization with blocks of 128-Kbytes or 64-Kwords each. The device also features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The PC28F00AM29EWLE is designed for low power consumption and is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm multilevel cell (MLC) process technology and is available in a 64-ball fortified BGA package measuring 11mm x 13mm. The device is RoHS-compliant and halogen-free, with an operating temperature range of -40¬8C to +85¬8C.

Datasheet Summary
Powered by GS/AI

The PC28F00AM29EWLE is a 1Gb Embedded Parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers requiring a voltage of 1.65,ÄìV_{CC}. The device features asynchronous random and page read capabilities, with a page size of 16 words (32 bytes) and a page access time of 25ns. Random access times are specified at 100ns for the fortified BGA package and 110ns for the TSOP package. This memory device includes a 512-word program buffer, allowing for a typical program time of 0.88¬µs per byte when utilizing the full buffer size. It supports uniform block memory organization with blocks of 128-Kbytes or 64-Kwords each. The device also features program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The PC28F00AM29EWLE is designed for low power consumption and is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. It is manufactured using 65nm multilevel cell (MLC) process technology and is available in a 64-ball fortified BGA package measuring 11mm x 13mm. The device is RoHS-compliant and halogen-free, with an operating temperature range of -40¬8C to +85¬8C.

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - 1452926-PC28F00AM29EWLE - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
1452926-PC28F00AM29EWLE
IT infrastructure Memory 1452926-PC28F00AM29EWLE
Category: IT infrastructure Memory Win Source Part Number: 1452926-PC28F00AM29E WLE Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Win Source Part Number: 1452926-PC28F00AM29EWLE
Manufacturer: Micron Technology Inc.

Buy Now
Memory - PC28F00AM29EWLE-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 100ns 64-FBGA (11x13)

FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 100ns 64-FBGA (11x13)

Buy Now Datasheet
Memory - PC28F00AM29EWLE - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit Parallel 100 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 1Gbit Parallel 100 ns 64-FBGA (11x13)

Buy Now Datasheet
IC FLASH 1GBIT PARALLEL 64FBGA

IC FLASH 1GBIT PARALLEL 64FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - PC28F00AM29EWLE - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
PC28F00AM29EWLE
Integrated Circuits (ICs) - Memory - Memory PC28F00AM29EWLE
IC FLASH 1GBIT PARALLEL 64FBGA

IC FLASH 1GBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1452926-PC28F00AM29EWLE PC28F00AM29EWLE-ND PC28F00AM29EWLE PC28F00AM29EWLE PC28F00AM29EWLE
Product Name IT infrastructure Memory Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 64-LBGA BGA; 64-LBGA BGA
Supply Voltage 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V -40degC ~ 85degC (TA)
Unlock Full Specs
to access all available technical data

Similar Products

SmartMedia Cards - 7723167 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
View Details
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 591289-004-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers