Micron Technology, Inc. Memory NAND512R3A2SN6F

Description
IC FLASH 512MBIT PAR 48TSOP I
Datasheet
Description
IC FLASH 512MBIT PAR 48TSOP I
Datasheet

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Description
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IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site Datasheet
Memory - NAND512R3A2SN6F - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

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Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2SN6F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2SN6F
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SN6F
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2SN6F NAND512R3A2SN6F NAND512R3A2SN6F
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 50 ns 50 ns
Density 512000 kbits 512000 kbits 512000 kbits
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