Micron Technology, Inc. Memory NAND512R3A2SN6E

Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I
Datasheet
Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND512R3A2SN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

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IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2SN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2SN6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SN6E
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2SN6E NAND512R3A2SN6E NAND512R3A2SN6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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