Micron Technology, Inc. Memory NAND512R3A2SN6E

Description
IC FLASH 512MBIT PAR 48TSOP I
Datasheet
Description
IC FLASH 512MBIT PAR 48TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2SN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2SN6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SN6E
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site
Memory - NAND512R3A2SN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2SN6E NAND512R3A2SN6E NAND512R3A2SN6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 50 ns 50 ns
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-EAN62691701 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
View Details
3 suppliers
Memory - MYXXXXX16MP16PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882723 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details