Micron Technology, Inc. Memory NAND512R3A2SN6E

Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I
Datasheet
Description
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NAND512R3A2SN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2SN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2SN6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SN6E
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2SN6E NAND512R3A2SN6E NAND512R3A2SN6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS5SS256K18 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Memory - 609368300A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers