Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SN6E

Description
IC FLASH 512MBIT PAR 48TSOP I
Datasheet
Description
IC FLASH 512MBIT PAR 48TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - NAND512R3A2SN6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NAND512R3A2SN6E
Integrated Circuits (ICs) - Memory - Memory NAND512R3A2SN6E
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site
IC FLASH 512MBIT PAR 48TSOP I

IC FLASH 512MBIT PAR 48TSOP I

Supplier's Site Datasheet
Memory - NAND512R3A2SN6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

FLASH - NAND Memory IC 512Mbit Parallel 50 ns 48-TSOP I

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number NAND512R3A2SN6E NAND512R3A2SN6E NAND512R3A2SN6E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage 48-TFSOP (0.724, 18.40mm Width) 1.7V ~ 1.95V
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