Micron Technology, Inc. Memory - Flash - NAND256R3A2BZA6E NAND256R3A2BZA6E

Description
Manufacturer: Micron Technology Inc. Win Source Part Number: 806048-NAND256R3A2BZ A6E Packaging: Tray Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 256Mb (32M x 8) Access Time: 50ns Part Status: Obsolete (End Of Life) Supplier Device Package: 55-VFBGA (8x10) Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 50ns Memory Interface: Parallel Manufacturer Package: 55-TFBGA Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,518 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V Part Number Series: NAND256-A
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Description
Manufacturer: Micron Technology Inc. Win Source Part Number: 806048-NAND256R3A2BZ A6E Packaging: Tray Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 256Mb (32M x 8) Access Time: 50ns Part Status: Obsolete (End Of Life) Supplier Device Package: 55-VFBGA (8x10) Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 50ns Memory Interface: Parallel Manufacturer Package: 55-TFBGA Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,518 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V Part Number Series: NAND256-A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - NAND256R3A2BZA6E - 806048-NAND256R3A2BZA6E - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND256R3A2BZA6E
806048-NAND256R3A2BZA6E
Memory - Flash - NAND256R3A2BZA6E 806048-NAND256R3A2BZA6E
Manufacturer: Micron Technology Inc. Win Source Part Number: 806048-NAND256R3A2BZ A6E Packaging: Tray Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 256Mb (32M x 8) Access Time: 50ns Part Status: Obsolete (End Of Life) Supplier Device Package: 55-VFBGA (8x10) Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 50ns Memory Interface: Parallel Manufacturer Package: 55-TFBGA Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,518 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V Part Number Series: NAND256-A

Manufacturer: Micron Technology Inc.
Win Source Part Number: 806048-NAND256R3A2BZA6E
Packaging: Tray
Mounting Style: SMD
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 256Mb (32M x 8)
Access Time: 50ns
Part Status: Obsolete (End Of Life)
Supplier Device Package: 55-VFBGA (8x10)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: FLASH
Write Cycle Time - Word, Page: 50ns
Memory Interface: Parallel
Manufacturer Package: 55-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,518
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V
Part Number Series: NAND256-A

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1.8V 3V Memory IC and Storage Component - 774-NAND256R3A2BZA6E - ERSAELECTRONICS PTE. LTD.
Singapore
1.8V 3V Memory IC and Storage Component
774-NAND256R3A2BZA6E
1.8V 3V Memory IC and Storage Component 774-NAND256R3A2BZA6E
IC FLASH 256M PARALLEL 55VFBGA / 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Product overview: NAND256R3A2BZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V, 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND256R3A2BZA6E can be used for catalog matching and distributor lookup.

IC FLASH 256M PARALLEL 55VFBGA / 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Product overview: NAND256R3A2BZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.8V, 3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.8V, 3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND256R3A2BZA6E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - NAND256R3A2BZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

FLASH - NAND Memory IC 256Mbit Parallel 50 ns 55-VFBGA (8x10)

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IC FLSH 256MBIT PARALLEL 55VFBGA

IC FLSH 256MBIT PARALLEL 55VFBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 806048-NAND256R3A2BZA6E 774-NAND256R3A2BZA6E NAND256R3A2BZA6E NAND256R3A2BZA6E
Product Name Memory - Flash - NAND256R3A2BZA6E 1.8V 3V Memory IC and Storage Component Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH Flash; Flash
Access Time 50 ns 50 ns 50 ns 50 ns
Cycle Time 50 ns 50 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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