Micron Technology, Inc. Memory - Flash - NAND02GW3B2DZA6F NAND02GW3B2DZA6F

Description
Manufacturer: Micron Technology Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 981503-NAND02GW3B2DZ A6F Packaging: Tape and Reel Operating Supply Voltage: 3 V Memory Type: NAND Interface: Parallel Access Time: 25 µs Density: 2 Gb Sync/Async: Asynchronous Word Size: 8 b Number of Pins: 63 Categories: Flash Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Page Size: 2 kB Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -40 °C Max Supply Voltage: 3.6 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA Address Bus Width: 8 b
Request a Quote
Description
Manufacturer: Micron Technology Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 981503-NAND02GW3B2DZ A6F Packaging: Tape and Reel Operating Supply Voltage: 3 V Memory Type: NAND Interface: Parallel Access Time: 25 µs Density: 2 Gb Sync/Async: Asynchronous Word Size: 8 b Number of Pins: 63 Categories: Flash Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Page Size: 2 kB Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -40 °C Max Supply Voltage: 3.6 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA Address Bus Width: 8 b
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - NAND02GW3B2DZA6F - 981503-NAND02GW3B2DZA6F - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - NAND02GW3B2DZA6F
981503-NAND02GW3B2DZA6F
Memory - Flash - NAND02GW3B2DZA6F 981503-NAND02GW3B2DZA6F
Manufacturer: Micron Technology Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 981503-NAND02GW3B2DZ A6F Packaging: Tape and Reel Operating Supply Voltage: 3 V Memory Type: NAND Interface: Parallel Access Time: 25 µs Density: 2 Gb Sync/Async: Asynchronous Word Size: 8 b Number of Pins: 63 Categories: Flash Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Page Size: 2 kB Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -40 °C Max Supply Voltage: 3.6 V Min Supply Voltage: 2.7 V Nominal Supply Current: 30 mA Address Bus Width: 8 b

Manufacturer: Micron Technology Inc.
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 981503-NAND02GW3B2DZA6F
Packaging: Tape and Reel
Operating Supply Voltage: 3 V
Memory Type: NAND
Interface: Parallel
Access Time: 25 µs
Density: 2 Gb
Sync/Async: Asynchronous
Word Size: 8 b
Number of Pins: 63
Categories: Flash
Popularity: Low
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 85 °C
Page Size: 2 kB
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -40 °C
Max Supply Voltage: 3.6 V
Min Supply Voltage: 2.7 V
Nominal Supply Current: 30 mA
Address Bus Width: 8 b

Buy Now
8-bit 3V 8bit Memory IC and Storage Component - 774-NAND02GW3B2DZA6F - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
8-bit 3V 8bit Memory IC and Storage Component
774-NAND02GW3B2DZA6F
8-bit 3V 8bit Memory IC and Storage Component 774-NAND02GW3B2DZA6F
NAND Flash Parallel 3V 2Gbit 256M x 8bit 25us 63-Pin VFBGA T/R Product overview: NAND02GW3B2DZA6F from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8-bit, 3V, 8bit. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8-bit, 3V, 8bit, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND02GW3B2DZA6F can be used for catalog matching and distributor lookup.

NAND Flash Parallel 3V 2Gbit 256M x 8bit 25us 63-Pin VFBGA T/R Product overview: NAND02GW3B2DZA6F from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8-bit, 3V, 8bit. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 8-bit, 3V, 8bit, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-NAND02GW3B2DZA6F can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips Memory Chips
Product Number 981503-NAND02GW3B2DZA6F 774-NAND02GW3B2DZA6F
Product Name Memory - Flash - NAND02GW3B2DZA6F 8-bit 3V 8bit Memory IC and Storage Component
Memory Category Flash; NAND Flash; NAND
Access Time 25000 ns 25000 ns
Operating Temperature -40 C (-40 F) -40 C (-40 F)
Density 2000000 kbits 2000000 kbits
Pins 63 63
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712194 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Package Type SOIC
View Details
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CAT28F020H-12T - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 120 ns
Density 2000 kbits
View Details