Micron Technology, Inc. Memory MT58L256V18F1T-10

Description
SRAM - Synchronous Memory IC 4Mbit Parallel 66 MHz 10 ns 100-TQFP (14x20.1)
Datasheet
Description
SRAM - Synchronous Memory IC 4Mbit Parallel 66 MHz 10 ns 100-TQFP (14x20.1)
Datasheet

Suppliers

Company
Product
Description
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Memory - MT58L256V18F1T-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 4Mbit Parallel 66 MHz 10 ns 100-TQFP (14x20.1)

SRAM - Synchronous Memory IC 4Mbit Parallel 66 MHz 10 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT58L256V18F1T-10 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT58L256V18F1T-10
Integrated Circuits (ICs) - Memory - Memory MT58L256V18F1T-10
IC SRAM 4MBIT PARALLEL 100TQFP

IC SRAM 4MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number MT58L256V18F1T-10 MT58L256V18F1T-10
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits
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