Micron Technology, Inc. Memory MT58L128L18DT-10

Description
SRAM - Standard Memory IC 2Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)
Description
SRAM - Standard Memory IC 2Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)
Datasheet
Datasheet Summary
Powered by GS/AI

The MT58L128L18DT-10 is a 2Mb synchronous burst SRAM from Quarktwin Technology Ltd., featuring a configuration of 128K x 18 bits. It operates at a voltage of 3.3V and supports fast access times of 5ns with a maximum clock frequency of 100 MHz. The device is designed for pipelined operation, allowing for efficient data handling in high-speed applications. It includes multiple chip enable inputs for easy depth expansion and supports both interleaved and linear burst modes through dedicated control pins. The SRAM also features individual byte write controls and a global write function, enabling flexible data manipulation. The package is a 100-pin TQFP, making it suitable for various applications requiring compact and efficient memory solutions.

Datasheet Summary
Powered by GS/AI

The MT58L128L18DT-10 is a 2Mb synchronous burst SRAM from Quarktwin Technology Ltd., featuring a configuration of 128K x 18 bits. It operates at a voltage of 3.3V and supports fast access times of 5ns with a maximum clock frequency of 100 MHz. The device is designed for pipelined operation, allowing for efficient data handling in high-speed applications. It includes multiple chip enable inputs for easy depth expansion and supports both interleaved and linear burst modes through dedicated control pins. The SRAM also features individual byte write controls and a global write function, enabling flexible data manipulation. The package is a 100-pin TQFP, making it suitable for various applications requiring compact and efficient memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT58L128L18DT-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Standard Memory IC 2Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)

SRAM - Standard Memory IC 2Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT58L128L18DT-10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT58L128L18DT-10
Integrated Circuits (ICs) - Memory MT58L128L18DT-10
CACHE SRAM, 128KX18, 5NS PQFP100

CACHE SRAM, 128KX18, 5NS PQFP100

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number MT58L128L18DT-10 MT58L128L18DT-10
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-CY62126EV30LL-45ZSXA - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Access Time 45 ns
Operating Temperature -40 C (-40 F)
View Details
4 suppliers
Memory - RAM - MT5C1008ECA55L883C - 1232483-MT5C1008ECA55L883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Logic - FIFOs Memory - 67C4013-10NL - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
Flash Memory - 1712192 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type SOIC
Pins 8
View Details