The MT58L128L18DT-10 is a 2Mb synchronous burst SRAM from Quarktwin Technology Ltd., featuring a configuration of 128K x 18 bits. It operates at a voltage of 3.3V and supports fast access times of 5ns with a maximum clock frequency of 100 MHz. The device is designed for pipelined operation, allowing for efficient data handling in high-speed applications. It includes multiple chip enable inputs for easy depth expansion and supports both interleaved and linear burst modes through dedicated control pins. The SRAM also features individual byte write controls and a global write function, enabling flexible data manipulation. The package is a 100-pin TQFP, making it suitable for various applications requiring compact and efficient memory solutions.
CACHE SRAM, 128KX18, 5NS PQFP100
SRAM - Standard Memory IC 2Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)
| Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|
| Product Category | Memory Chips | Memory Chips |
| Product Number | MT58L128L18DT-10 | MT58L128L18DT-10 |
| Product Name | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | SRAM; SRAM Chip | |
| Access Time | 5 ns | |
| Operating Temperature | 0 to 70 C (32 to 158 F) |
