Micron Technology, Inc. Memory MT57W2MH8CF-6

Description
SRAM - Synchronous Memory IC 18Mbit Parallel 167 MHz 165-FBGA (13x15)
Datasheet
Description
SRAM - Synchronous Memory IC 18Mbit Parallel 167 MHz 165-FBGA (13x15)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT57W2MH8CF-6 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous Memory IC 18Mbit Parallel 167 MHz 165-FBGA (13x15)

SRAM - Synchronous Memory IC 18Mbit Parallel 167 MHz 165-FBGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - MT57W2MH8CF-6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT57W2MH8CF-6
Integrated Circuits (ICs) - Memory MT57W2MH8CF-6
IC SRAM 18MBIT PARALLEL 165FBGA

IC SRAM 18MBIT PARALLEL 165FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number MT57W2MH8CF-6 MT57W2MH8CF-6
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - CY14V101PS-SF108XI - Rochester Electronics
Infineon Technologies AG
Specs
Memory Category SRAM Chip
Logic Family CMOS
Package Type SOIC; SOIC16
View Details
5 suppliers
Memory - RAM - MT5C1008F45L/883C - 1215637-MT5C1008F45L/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers
SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - 27C512AE200/883C - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 512 kbits
View Details