Micron Technology, Inc. Memory MT55V512V32PT-10

Description
SRAM - Asynchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)
Datasheet
Description
SRAM - Asynchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT55V512V32PT-10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)

SRAM - Asynchronous, ZBT Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT55V512V32PT-10 - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT55V512V32PT-10
Integrated Circuits (ICs) - Memory - Memory MT55V512V32PT-10
IC SRAM 18MBIT PAR 100TQFP

IC SRAM 18MBIT PAR 100TQFP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips
Product Number MT55V512V32PT-10 MT55V512V32PT-10
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - 9423DC - Rochester Electronics
Texas Instruments
Specs
Memory Category FIFO
Logic Family TTL
Package Type DIP; CDIP24
View Details
3 suppliers
Memory - SMJ416400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882828P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type USON
View Details
Memory - 2346575 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers