Micron Technology, Inc. Memory MT53E384M32D2FW-046 AAT:E TR

Description
SDRAM - Mobile LPDDR4X Memory IC 12Gb (384M x 32) Parallel 1.066GHz 3.5ns 200-TFBGA (10x14.5)
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Description
SDRAM - Mobile LPDDR4X Memory IC 12Gb (384M x 32) Parallel 1.066GHz 3.5ns 200-TFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Memory - 557-MT53E384M32D2FW-046AAT:ETRTB-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4X Memory IC 12Gb (384M x 32) Parallel 1.066GHz 3.5ns 200-TFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 12Gb (384M x 32) Parallel 1.066GHz 3.5ns 200-TFBGA (10x14.5)

Buy Now Datasheet
SDRAM - Mobile LPDDR4X Memory IC 12Gbit Parallel 1.066 GHz 3.5 ns 200-TFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 12Gbit Parallel 1.066 GHz 3.5 ns 200-TFBGA (10x14.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory MT53E384M32D2FW-046 AAT:E TR
IC DRAM

IC DRAM

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 557-MT53E384M32D2FW-046AAT:ETRTB-ND MT53E384M32D2FW-046 AAT:E TR MT53E384M32D2FW-046 AAT:E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 200-TFBGA BGA; 200-TFBGA BGA
Supply Voltage 1.06V ~ 1.17V 1.06V ~ 1.17V 1.06V ~ 1.17V
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