Series: *
Categories: Memory
SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 2.133GHz 200-WFBGA (10x14.5)
IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53E256M32D2DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS-
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 2.133 GHz 200-WFBGA (10x14.5)
LPDDR4 8G 256MX32 FBGA DDP
DRAM, 256M X 32BIT, -30 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes
LPDDR4 8G 256MX32 FBGA DDP
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-MT53E256M32D2DS-046WT:B-ND | 774-MT53E256M32D2DS-046 WT:B | MT53E256M32D2DS-046 WT:B | MT53E256M32D2DS-046 WT:B | 80AH8364 | MT53E256M32D2DS-046 WT:B | |
| Product Name | Memory - DDR - MT53E256M32D2DS-046 WT:B | Memory | 2.133GHZ Memory IC and Storage Component | Memory | Memory | Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | |
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | |||
| Package Type | 200-WFBGA | BGA; Tray | BGA; 200-WFBGA | WFBGA | BGA | ||
| Supply Voltage | 1.1V | 1.1V | 1.1V |
