Micron Technology, Inc. 2.133GHZ Memory IC and Storage Component MT53E256M32D2DS-046 WT:B

Description
IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53E256M32D2DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS- 046 WT:B can be used for catalog matching and distributor lookup.
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Description
IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53E256M32D2DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS- 046 WT:B can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
2.133GHZ Memory IC and Storage Component - 774-MT53E256M32D2DS-046 WT:B - ERSAELECTRONICS PTE. LTD.
Singapore
2.133GHZ Memory IC and Storage Component
774-MT53E256M32D2DS-046 WT:B
2.133GHZ Memory IC and Storage Component 774-MT53E256M32D2DS-046 WT:B
IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53E256M32D2DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS- 046 WT:B can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT 2.133GHZ 200WFBGA Product overview: MT53E256M32D2DS-046 WT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.133GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 2.133GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E256M32D2DS-046 WT:B can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - 557-MT53E256M32D2DS-046WT:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 2.133GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gb (256M x 32) 2.133GHz 200-WFBGA (10x14.5)

Buy Now Datasheet
Memory - DDR - MT53E256M32D2DS-046 WT:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT53E256M32D2DS-046 WT:B
Memory - DDR - MT53E256M32D2DS-046 WT:B
Series: * Categories: Memory

Series: *
Categories: Memory

Buy Now
LPDDR4 8G 256MX32 FBGA DDP

LPDDR4 8G 256MX32 FBGA DDP

Supplier's Site
Integrated Circuits (ICs) - Memory MT53E256M32D2DS-046 WT:B
LPDDR4 8G 256MX32 FBGA DDP

LPDDR4 8G 256MX32 FBGA DDP

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gbit 2.133 GHz 200-WFBGA (10x14.5)

Buy Now Datasheet
Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type Micron - 80AH8364 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type Micron
80AH8364
Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type Micron 80AH8364
DRAM, 256M X 32BIT, -30 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

DRAM, 256M X 32BIT, -30 TO 85DEG C; DRAM Type:LPDDR4; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:2.133GHz; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT53E256M32D2DS-046 WT:B 557-MT53E256M32D2DS-046WT:B-ND MT53E256M32D2DS-046 WT:B MT53E256M32D2DS-046 WT:B MT53E256M32D2DS-046 WT:B 80AH8364
Product Name 2.133GHZ Memory IC and Storage Component Memory Memory - DDR - MT53E256M32D2DS-046 WT:B Memory Integrated Circuits (ICs) - Memory Memory Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type Micron
Memory Category Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Package Type BGA; Tray 200-WFBGA BGA BGA; 200-WFBGA WFBGA
Supply Voltage 1.1V 1.1V 1.1V
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