Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 95°C (TC)
Fake Threat In the Open Market: 52 pct.
REACH Status: REACH Unaffected
Mfr: Micron Technology Inc.
Series: Automotive, AEC-Q100
Package: Box
Product Status: Active
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)
Technology: SDRAM - Mobile LPDDR4X
Mounting Type: Surface Mount
Voltage - Supply: 1.06V ~ 1.17V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 32Gbit
Memory Organization: 1G x 32
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
LPDDR4 32G 1GX32 FBGA DDP Product overview: MT53E1G32D2FW-046 AIT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53E1G32D2FW-04
IC DRAM 32GBIT PAR 200TFBGA
DRAM, AEC-Q100, 1GX32BIT, -40 TO 95DEG C; DRAM Type:LPDDR4; DRAM Density:32Gbit; DRAM Memory Configuration:1G x 32bit; Clock Frequency:2.133GHz; Memory Case Style:TFBGA; No. of Pins:200Pins; Supply Voltage Nom:1.1V; Access Time:468psRoHS Compliant: Yes
LPDDR4 32G 1GX32 FBGA DDP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53E1G32D2FW-046 AIT:B | 557-MT53E1G32D2FW-046AIT:B-ND | 25AK7954 | MT53E1G32D2FW-046 AIT:B | |
| Product Name | Integrated Circuits (ICs) - Memory - Memory | Memory IC and Storage Component | Memory | Dram, Aec-Q100, 1Gx32Bit, -40 To 95Deg C; Dram Type Micron | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | SDRAM - Mobile LPDDR4X |
| Access Time | 3.5 ns | 3.5 ns | 3.5 ns | ||
| Cycle Time | 18 ns | 18 ns | |||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |
| Supply Voltage | 1.06V ~ 1.17V | 1.06V ~ 1.17V | 1.06V ~ 1.17V | 1.06V ~ 1.17V |
