Micron Technology, Inc. Memory MT53D768M64D8NZ-046 WT ES:E

Description
IC DRAM 48GBIT 2133MHZ 376WFBGA
Description
IC DRAM 48GBIT 2133MHZ 376WFBGA

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IC DRAM 48GBIT 2133MHZ 376WFBGA

IC DRAM 48GBIT 2133MHZ 376WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 48Gbit 2.133 GHz 376-WFBGA (14x14)

SDRAM - Mobile LPDDR4 Memory IC 48Gbit 2.133 GHz 376-WFBGA (14x14)

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Integrated Circuits (ICs) - Memory - Memory - MT53D768M64D8NZ-046 WT ES:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D768M64D8NZ-046 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D768M64D8NZ-046 WT ES:E
IC DRAM 48GBIT 2.133GHZ 376WFBGA

IC DRAM 48GBIT 2.133GHZ 376WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D768M64D8NZ-046 WT ES:E MT53D768M64D8NZ-046 WT ES:E MT53D768M64D8NZ-046 WT ES:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 48000000 kbits 48000000 kbits 48000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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