Micron Technology, Inc. Memory MT53D512M32D2NP-046 WT ES:E TR

Description
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5)
Description
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5)

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SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M32D2NP-046 WT ES:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M32D2NP-046 WT ES:E TR
Integrated Circuits (ICs) - Memory - Memory MT53D512M32D2NP-046 WT ES:E TR
IC DRAM 16GBIT 2.133GHZ 200WFBGA

IC DRAM 16GBIT 2.133GHZ 200WFBGA

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IC DRAM 16GBIT 2133MHZ 200WFBGA

IC DRAM 16GBIT 2133MHZ 200WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M32D2NP-046 WT ES:E TR MT53D512M32D2NP-046 WT ES:E TR MT53D512M32D2NP-046 WT ES:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 16000000 kbits 16000000 kbits 16000000 kbits
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