Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53D512M32D2NP-046 WT ES:E TR

Description
IC DRAM 16GBIT 2.133GHZ 200WFBGA
Description
IC DRAM 16GBIT 2.133GHZ 200WFBGA

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Integrated Circuits (ICs) - Memory - Memory - MT53D512M32D2NP-046 WT ES:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D512M32D2NP-046 WT ES:E TR
Integrated Circuits (ICs) - Memory - Memory MT53D512M32D2NP-046 WT ES:E TR
IC DRAM 16GBIT 2.133GHZ 200WFBGA

IC DRAM 16GBIT 2.133GHZ 200WFBGA

Supplier's Site
IC DRAM 16GBIT 2133MHZ 200WFBGA

IC DRAM 16GBIT 2133MHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 2.133 GHz 200-WFBGA (10x14.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D512M32D2NP-046 WT ES:E TR MT53D512M32D2NP-046 WT ES:E TR MT53D512M32D2NP-046 WT ES:E TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 2133 MHz
Density 16000000 kbits 16000000 kbits 16000000 kbits
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