Micron Technology, Inc. Memory MT53D384M32D2DS-053 WT ES:E

Description
IC DRAM 12GBIT 1866MHZ 200WFBGA
Description
IC DRAM 12GBIT 1866MHZ 200WFBGA

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IC DRAM 12GBIT 1866MHZ 200WFBGA

IC DRAM 12GBIT 1866MHZ 200WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 12Gbit 1.866 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 12Gbit 1.866 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53D384M32D2DS-053 WT ES:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D384M32D2DS-053 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D384M32D2DS-053 WT ES:E
IC DRAM 12GBIT 1.866GHZ 200WFBGA

IC DRAM 12GBIT 1.866GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D384M32D2DS-053 WT ES:E MT53D384M32D2DS-053 WT ES:E MT53D384M32D2DS-053 WT ES:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 12000000 kbits 12000000 kbits 12000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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