Micron Technology, Inc. Memory MT53D384M32D2DS-046 WT ES:E

Description
IC DRAM 12GBIT 2133MHZ 200WFBGA
Description
IC DRAM 12GBIT 2133MHZ 200WFBGA

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Company
Product
Description
Supplier Links
IC DRAM 12GBIT 2133MHZ 200WFBGA

IC DRAM 12GBIT 2133MHZ 200WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT53D384M32D2DS-046 WT ES:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D384M32D2DS-046 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D384M32D2DS-046 WT ES:E
IC DRAM 12GBIT 2.133GHZ 200WFBGA

IC DRAM 12GBIT 2.133GHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 12Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 12Gbit 2.133 GHz 200-WFBGA (10x14.5)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D384M32D2DS-046 WT ES:E MT53D384M32D2DS-046 WT ES:E MT53D384M32D2DS-046 WT ES:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Density 12000000 kbits 12000000 kbits 12000000 kbits
Data Rate 2133 MHz
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