Micron Technology, Inc. Memory MT53D384M32D2DS-046 WT ES:E

Description
SDRAM - Mobile LPDDR4 Memory IC 12Gbit 2.133 GHz 200-WFBGA (10x14.5)
Description
SDRAM - Mobile LPDDR4 Memory IC 12Gbit 2.133 GHz 200-WFBGA (10x14.5)

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SDRAM - Mobile LPDDR4 Memory IC 12Gbit 2.133 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 12Gbit 2.133 GHz 200-WFBGA (10x14.5)

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IC DRAM 12GBIT 2133MHZ 200WFBGA

IC DRAM 12GBIT 2133MHZ 200WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT53D384M32D2DS-046 WT ES:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D384M32D2DS-046 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D384M32D2DS-046 WT ES:E
IC DRAM 12GBIT 2.133GHZ 200WFBGA

IC DRAM 12GBIT 2.133GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D384M32D2DS-046 WT ES:E MT53D384M32D2DS-046 WT ES:E MT53D384M32D2DS-046 WT ES:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 12000000 kbits 12000000 kbits 12000000 kbits
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