Micron Technology, Inc. Memory MT53D1G64D8NW-053 WT ES:E

Description
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz
Description
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz

Suppliers

Company
Product
Description
Supplier Links
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1G64D8NW-053 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D1G64D8NW-053 WT ES:E
IC DRAM 64GBIT 1.866GHZ FBGA 8DP

IC DRAM 64GBIT 1.866GHZ FBGA 8DP

Supplier's Site
LPDDR4 64G 1GX64 FBGA 8DP

LPDDR4 64G 1GX64 FBGA 8DP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1G64D8NW-053 WT ES:E MT53D1G64D8NW-053 WT ES:E MT53D1G64D8NW-053 WT ES:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS04GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers
Memory - 40060167 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers