Micron Technology, Inc. Memory MT53D1G64D8NW-053 WT ES:E

Description
LPDDR4 64G 1GX64 FBGA 8DP
Description
LPDDR4 64G 1GX64 FBGA 8DP

Suppliers

Company
Product
Description
Supplier Links
LPDDR4 64G 1GX64 FBGA 8DP

LPDDR4 64G 1GX64 FBGA 8DP

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1G64D8NW-053 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D1G64D8NW-053 WT ES:E
IC DRAM 64GBIT 1.866GHZ FBGA 8DP

IC DRAM 64GBIT 1.866GHZ FBGA 8DP

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1G64D8NW-053 WT ES:E MT53D1G64D8NW-053 WT ES:E MT53D1G64D8NW-053 WT ES:E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Controllers - NSBMC096VF-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type QFP; 132-BQFP Bumpered
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - 110756 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers