Micron Technology, Inc. Memory MT53D1536M32D6BE-053 WT ES:D

Description
IC DRAM 48GBIT 1866MHZ FBGA
  • Memory - MT53D1536M32D6BE-053 WT ES:D - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT53D1536M32D6BE-053 WT ES:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC DRAM 48GBIT 1866MHZ FBGA

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53D1536M32D6BE-053 WT ES:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53D1536M32D6BE-053 WT ES:D
Memory MT53D1536M32D6BE-053 WT ES:D
IC DRAM 48GBIT 1866MHZ FBGA

IC DRAM 48GBIT 1866MHZ FBGA

Supplier's Site
Memory - MT53D1536M32D6BE-053 WT ES:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53D1536M32D6BE-053 WT ES:D
Memory MT53D1536M32D6BE-053 WT ES:D
SDRAM - Mobile LPDDR4 Memory IC 48Gbit 1.866 GHz

SDRAM - Mobile LPDDR4 Memory IC 48Gbit 1.866 GHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT53D1536M32D6BE-053 WT ES:D MT53D1536M32D6BE-053 WT ES:D
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-JBP18S030MJ - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
JBP18S030MJ
Specs
Memory Category PROM
Operating Temperature -55 C (-67 F)
Density 0 kbits
View Details
4 suppliers
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Memory
MT4C1004J
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882679 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882679
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 3354733 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
3354733
View Details