Micron Technology, Inc. Memory MT53D1024M32D4NQ-062 WT:D TR

Description
IC DRAM 32GBIT 1600MHZ 200VFBGA
Description
IC DRAM 32GBIT 1600MHZ 200VFBGA

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32GBIT 1600MHZ 200VFBGA

IC DRAM 32GBIT 1600MHZ 200VFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.6 GHz 200-VFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.6 GHz 200-VFBGA (10x14.5)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT53D1024M32D4NQ-062 WT:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1024M32D4NQ-062 WT:D TR
Integrated Circuits (ICs) - Memory - Memory MT53D1024M32D4NQ-062 WT:D TR
IC DRAM 32GBIT 1.6GHZ 200VFBGA

IC DRAM 32GBIT 1.6GHZ 200VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1024M32D4NQ-062 WT:D TR MT53D1024M32D4NQ-062 WT:D TR MT53D1024M32D4NQ-062 WT:D TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Logic - FIFOs Memory - 5962-9470401QXA - Lingto Electronic Limited
Specs
Data Rate 50 MHz
Operating Current 95 mA
View Details
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Controllers - BQ2201PNG4 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 8-DIP (0.300\", 7.62mm)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers