Micron Technology, Inc. Memory MT53B384M32D2NK-062 WT ES:B

Description
IC DRAM 12GBIT 1600MHZ FBGA
Description
IC DRAM 12GBIT 1600MHZ FBGA

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 12GBIT 1600MHZ FBGA

IC DRAM 12GBIT 1600MHZ FBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 12Gbit 1.6 GHz

SDRAM - Mobile LPDDR4 Memory IC 12Gbit 1.6 GHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B384M32D2NK-062 WT ES:B
Integrated Circuits (ICs) - Memory - Memory MT53B384M32D2NK-062 WT ES:B
IC DRAM 12GBIT 1.6GHZ FBGA

IC DRAM 12GBIT 1.6GHZ FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B384M32D2NK-062 WT ES:B MT53B384M32D2NK-062 WT ES:B MT53B384M32D2NK-062 WT ES:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C010-55DM/B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 55 ns
Density 1000 kbits
View Details
2 suppliers
Memory - SMJ28F010B - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 120 to 200 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 93Z451LMQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers