Micron Technology, Inc. Memory MT53B256M32D1DS-062 XT:C TR

Description
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)
Description
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

Suppliers

Company
Product
Description
Supplier Links
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

Buy Now
IC DRAM 8GBIT 1600MHZ 200WFBGA

IC DRAM 8GBIT 1600MHZ 200WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT53B256M32D1DS-062 XT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B256M32D1DS-062 XT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B256M32D1DS-062 XT:C TR
IC DRAM 8GBIT 1.6GHZ 200WFBGA

IC DRAM 8GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B256M32D1DS-062 XT:C TR MT53B256M32D1DS-062 XT:C TR MT53B256M32D1DS-062 XT:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-NMC2148HJ-2 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 45 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
4 suppliers
Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - AS4SD32M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - 0791076239RQA00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers