Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53B256M32D1DS-062 AIT:C TR

Description
IC DRAM 8GBIT 1.6GHZ 200WFBGA
Description
IC DRAM 8GBIT 1.6GHZ 200WFBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT53B256M32D1DS-062 AIT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B256M32D1DS-062 AIT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B256M32D1DS-062 AIT:C TR
IC DRAM 8GBIT 1.6GHZ 200WFBGA

IC DRAM 8GBIT 1.6GHZ 200WFBGA

Supplier's Site
IC DRAM 8GBIT 1600MHZ 200WFBGA

IC DRAM 8GBIT 1600MHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B256M32D1DS-062 AIT:C TR MT53B256M32D1DS-062 AIT:C TR MT53B256M32D1DS-062 AIT:C TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
600MHz Memory IC and Storage Component - 774-HYB18T256324F-20 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
Flash Memory - 1882745P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 32000 kbits
Package Type USON
View Details
Memory - 5962-8996701MXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 60 ns
Density 64 kbits
View Details