Micron Technology, Inc. Memory MT53B256M32D1DS-062 AIT:C TR

Description
IC DRAM 8GBIT 1600MHZ 200WFBGA
Description
IC DRAM 8GBIT 1600MHZ 200WFBGA

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 8GBIT 1600MHZ 200WFBGA

IC DRAM 8GBIT 1600MHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT53B256M32D1DS-062 AIT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B256M32D1DS-062 AIT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B256M32D1DS-062 AIT:C TR
IC DRAM 8GBIT 1.6GHZ 200WFBGA

IC DRAM 8GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B256M32D1DS-062 AIT:C TR MT53B256M32D1DS-062 AIT:C TR MT53B256M32D1DS-062 AIT:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 0791076249RQA00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details