Micron Technology, Inc. Memory MT53B128M32D1DS-062 AUT:A TR

Description
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)
Description
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)

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SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53B128M32D1DS-062 AUT:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B128M32D1DS-062 AUT:A TR
Integrated Circuits (ICs) - Memory - Memory MT53B128M32D1DS-062 AUT:A TR
IC DRAM 4GBIT 1.6GHZ 200WFBGA

IC DRAM 4GBIT 1.6GHZ 200WFBGA

Supplier's Site
IC DRAM 4GBIT 1600MHZ 200WFBGA

IC DRAM 4GBIT 1600MHZ 200WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B128M32D1DS-062 AUT:A TR MT53B128M32D1DS-062 AUT:A TR MT53B128M32D1DS-062 AUT:A TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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