Micron Technology, Inc. Memory MT53B128M32D1DS-062 AUT:A TR

Description
IC DRAM 4GBIT 1600MHZ 200WFBGA
Description
IC DRAM 4GBIT 1600MHZ 200WFBGA

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IC DRAM 4GBIT 1600MHZ 200WFBGA

IC DRAM 4GBIT 1600MHZ 200WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53B128M32D1DS-062 AUT:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B128M32D1DS-062 AUT:A TR
Integrated Circuits (ICs) - Memory - Memory MT53B128M32D1DS-062 AUT:A TR
IC DRAM 4GBIT 1.6GHZ 200WFBGA

IC DRAM 4GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B128M32D1DS-062 AUT:A TR MT53B128M32D1DS-062 AUT:A TR MT53B128M32D1DS-062 AUT:A TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature -40 to 125 C (-40 to 257 F)
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