Micron Technology, Inc. Memory MT53B1024M64D8WF-062 WT:D

Description
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.6 GHz
  • Memory - MT53B1024M64D8WF-062 WT:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT53B1024M64D8WF-062 WT:D - Lingto Electronic Limited
    Lingto Electronic Limited
Description
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.6 GHz

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B1024M64D8WF-062 WT:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53B1024M64D8WF-062 WT:D
Memory MT53B1024M64D8WF-062 WT:D
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.6 GHz

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.6 GHz

Buy Now
Memory - MT53B1024M64D8WF-062 WT:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53B1024M64D8WF-062 WT:D
Memory MT53B1024M64D8WF-062 WT:D
IC DRAM 64GBIT 1600MHZ

IC DRAM 64GBIT 1600MHZ

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT53B1024M64D8WF-062 WT:D MT53B1024M64D8WF-062 WT:D
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DWR - Texas Instruments
Texas Instruments
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2227DWR
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
- 27S35ADM/B - Rochester Electronics
Rochester Electronics
27S35ADM/B
Specs
Memory Category PROM
Package Type DIP; CDIP
View Details
Memory - 524313-006-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
524313-006-00
View Details
2 suppliers
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ418160
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details