The MT49H16M16FM-5 TR is a 256Mb reduced latency DRAM (RLDRAM) from Quarktwin Technology Ltd., featuring an organization of 16 Meg x 16 in 8 banks. It supports double data rate (DDR) operation with a maximum data rate of 600 Mb/sec per pin. The device offers programmable read latency options of 5 or 6 cycles and includes features such as cyclic bank addressing for enhanced data bandwidth and non-multiplexed addresses for simplified access. The memory operates at a voltage of 2.5V for VEXT and 1.8V for both VDD and VDDQ I/O, utilizing pseudo-HSTL I/O supply levels. It is packaged in a 144-pin ¬µBGA format measuring 11mm x 18.5mm. The device is suitable for high-bandwidth applications in telecommunications, networking, and cache memory systems, with a refresh requirement of 32ms at 95¬8C case temperature. The MT49H16M16FM-5 TR is compliant with IEEE 1149.1 JTAG boundary scan standards, making it suitable for testing and debugging in complex systems.
DRAM Memory IC 256Mb (16M x 16) Parallel 200MHz 144-µBGA (18.5x11)
IC DRAM 256MBIT PARALLEL 144UBGA
IC DRAM 256MBIT PARALLEL 144UBGA
DRAM Memory IC 256Mbit Parallel 200 MHz 144-µBGA (18.5x11)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT49H16M16FM-5TR-ND | MT49H16M16FM-5 TR | MT49H16M16FM-5 TR | MT49H16M16FM-5 TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
