Micron Technology, Inc. Memory MT48LC8M32LFB5-10 TR

Description
IC DRAM 256MBIT PARALLEL 90VFBGA
Description
IC DRAM 256MBIT PARALLEL 90VFBGA

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Description
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IC DRAM 256MBIT PARALLEL 90VFBGA

IC DRAM 256MBIT PARALLEL 90VFBGA

Supplier's Site
Memory - MT48LC8M32LFB5-10 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

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Integrated Circuits (ICs) - Memory - Memory - MT48LC8M32LFB5-10 TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT48LC8M32LFB5-10 TR
Integrated Circuits (ICs) - Memory - Memory MT48LC8M32LFB5-10 TR
IC DRAM 256MBIT PAR 90VFBGA

IC DRAM 256MBIT PAR 90VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT48LC8M32LFB5-10 TR MT48LC8M32LFB5-10 TR MT48LC8M32LFB5-10 TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 7 ns 7 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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