Micron Technology, Inc. Memory MT48LC8M32LFB5-10 TR

Description
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)
Description
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT48LC8M32LFB5-10 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

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IC DRAM 256MBIT PARALLEL 90VFBGA

IC DRAM 256MBIT PARALLEL 90VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT48LC8M32LFB5-10 TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT48LC8M32LFB5-10 TR
Integrated Circuits (ICs) - Memory - Memory MT48LC8M32LFB5-10 TR
IC DRAM 256MBIT PAR 90VFBGA

IC DRAM 256MBIT PAR 90VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT48LC8M32LFB5-10 TR MT48LC8M32LFB5-10 TR MT48LC8M32LFB5-10 TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 7 ns 7 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits
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