Micron Technology, Inc. Memory MT46V32M16TG-75E:C

Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V32M16TG-75E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

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IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16TG-75E:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16TG-75E:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16TG-75E:C MT46V32M16TG-75E:C MT46V32M16TG-75E:C
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7500 ns 0.7500 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits
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