Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C

Description
IC DRAM 512MBIT PARALLEL 66TSOP
Datasheet
Description
IC DRAM 512MBIT PARALLEL 66TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16TG-75E:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16TG-75E:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet
Memory - MT46V32M16TG-75E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16TG-75E:C MT46V32M16TG-75E:C MT46V32M16TG-75E:C
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX6M4424 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MOSFET
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type CDIP-8LD
View Details
Flash Memory - 1882657P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 28C64A-20/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details