Micron Technology, Inc. Memory MT46V32M16TG-75E:C

Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V32M16TG-75E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16TG-75E:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16TG-75E:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16TG-75E:C MT46V32M16TG-75E:C MT46V32M16TG-75E:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7500 ns 0.7500 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 5962-8852503ZA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 250 ns
Density 256 kbits
View Details
CD54HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD54HC40105F3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP
View Details
3 suppliers