Micron Technology, Inc. Memory MT46V32M16TG-75E:C

Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Datasheet
Description
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT46V32M16TG-75E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

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Integrated Circuits (ICs) - Memory - Memory - MT46V32M16TG-75E:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16TG-75E:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16TG-75E:C MT46V32M16TG-75E:C MT46V32M16TG-75E:C
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7500 ns 0.7500 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits
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