Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C

Description
IC DRAM 512MBIT PARALLEL 66TSOP
Datasheet
Description
IC DRAM 512MBIT PARALLEL 66TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT46V32M16TG-75E:C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT46V32M16TG-75E:C
Integrated Circuits (ICs) - Memory - Memory MT46V32M16TG-75E:C
IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site
Memory - MT46V32M16TG-75E:C - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP

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IC DRAM 512MBIT PARALLEL 66TSOP

IC DRAM 512MBIT PARALLEL 66TSOP

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT46V32M16TG-75E:C MT46V32M16TG-75E:C MT46V32M16TG-75E:C
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7500 ns
Density 512000 kbits 512000 kbits 512000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
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