Micron Technology, Inc. Memory MT45W4MW16PFA-85 WT TR

Description
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 85ns 48-VFBGA (6x8)
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Description
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 85ns 48-VFBGA (6x8)
Request a Quote
Datasheet
Datasheet Summary
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The MT45W4MW16PFA-85 WT TR is a 64Mb (4 Meg x 16) Asynchronous/Page CellularRAM 1.0 Memory device from Quarktwin Technology Ltd. It features a random access time of 85ns and operates with VCC voltage ranging from 1.70V to 1.95V and VCCQ voltage from 1.70V to 3.30V. The memory supports a page mode read access with a sixteen-word page size, allowing for intrapage read access times of 25ns. This memory device is designed for low power consumption, with an asynchronous read current of less than 25mA and an intrapage read current of less than 15mA. It also offers a standby current of 120µA, with a low-power option reducing it to 100µA, and a deep power-down mode that consumes less than 10µA at typical conditions. The operating temperature range for this part is from -30°C to +85°C, making it suitable for wireless applications. However, it is noted that this product is not recommended for new designs, and engineers should consider this when evaluating its use in future projects.

Datasheet Summary
Powered by GS/AI

The MT45W4MW16PFA-85 WT TR is a 64Mb (4 Meg x 16) Asynchronous/Page CellularRAM 1.0 Memory device from Quarktwin Technology Ltd. It features a random access time of 85ns and operates with VCC voltage ranging from 1.70V to 1.95V and VCCQ voltage from 1.70V to 3.30V. The memory supports a page mode read access with a sixteen-word page size, allowing for intrapage read access times of 25ns. This memory device is designed for low power consumption, with an asynchronous read current of less than 25mA and an intrapage read current of less than 15mA. It also offers a standby current of 120µA, with a low-power option reducing it to 100µA, and a deep power-down mode that consumes less than 10µA at typical conditions. The operating temperature range for this part is from -30°C to +85°C, making it suitable for wireless applications. However, it is noted that this product is not recommended for new designs, and engineers should consider this when evaluating its use in future projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT45W4MW16PFA-85WTTR-ND - DigiKey
Thief River Falls, MN, United States
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 85ns 48-VFBGA (6x8)

PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 85ns 48-VFBGA (6x8)

Buy Now Datasheet
IC PSRAM 64MBIT PARALLEL 48VFBGA

IC PSRAM 64MBIT PARALLEL 48VFBGA

Supplier's Site Datasheet
PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 85 ns 48-VFBGA (6x8)

PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 85 ns 48-VFBGA (6x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT45W4MW16PFA-85 WT TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT45W4MW16PFA-85 WT TR
Integrated Circuits (ICs) - Memory - Memory MT45W4MW16PFA-85 WT TR
IC PSRAM 64MBIT PARALLEL 48VFBGA

IC PSRAM 64MBIT PARALLEL 48VFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT45W4MW16PFA-85WTTR-ND MT45W4MW16PFA-85 WT TR MT45W4MW16PFA-85 WT TR MT45W4MW16PFA-85 WT TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category PSRAM PSRAM; SRAM Chip PSRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 48-VFBGA BGA; 48-VFBGA
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