The MT45W4MW16BBB-706 WT TR is a 64Mbit Pseudo SRAM (PSRAM) memory device from Quarktwin Technology Ltd., featuring a 4 Meg x 16 configuration. It operates with a maximum access time of 70ns and supports asynchronous, page, and burst operations. The device is available in a 54-ball VFBGA package and offers a voltage range of 1.70V to 1.95V for VCC and 1.70V to 3.30V for VCCQ. This memory supports a maximum clock rate of 80 MHz, with burst read access capabilities of 4, 8, or 16 words. It features low power consumption, with typical currents of less than 25mA during asynchronous reads and less than 15mA during intrapage reads. The device also includes low-power features such as temperature-compensated refresh and deep power-down modes. Operating temperature ranges are specified from -30¬8C to +85¬8C for wireless applications and -40¬8C to +85¬8C for industrial applications. However, it is noted that this part is not recommended for new designs, and engineers should consider contacting the factory for further information.
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 70ns 54-VFBGA (6x9)
IC PSRAM 64MBIT PARALLEL 54VFBGA
PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 70 ns 54-VFBGA (6x9)
IC PSRAM 64MBIT PARALLEL 54VFBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1008-2-ND | MT45W4MW16BBB-706 WT TR | MT45W4MW16BBB-706 WT TR | MT45W4MW16BBB-706 WT TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | PSRAM | Volatile; SRAM Chip | PSRAM; SRAM Chip | PSRAM; SRAM Chip |
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | ||
| Density | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits |
| Package Type | 54-VFBGA | BGA; 54-VFBGA |
