SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
Series: *
Categories: Memory
IC DRAM 1GBIT PAR 96FBGA Product overview: MT41K64M16TW-107 AUT:J from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K64M16TW-107
DRAM, 64M X 16BIT, -40 TO 125DEG C; DRAM Type:DDR3; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:933MHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns RoHS Compliant: Yes
IC DRAM 1GBIT PAR 96FBGA
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14)
IC DRAM 1GBIT PARALLEL 96FBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT41K64M16TW-107AUT:J-ND | 774-MT41K64M16TW-107 AUT:J | 80AH8052 | MT41K64M16TW-107 AUT:J | MT41K64M16TW-107 AUT:J | MT41K64M16TW-107 AUT:J | |
| Product Name | Memory | Memory - DDR - MT41K64M16TW-107 AUT:J | Memory IC and Storage Component | Dram, 64M X 16Bit, -40 To 125Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Operating Temperature | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | ||||
| Package Type | 96-TFBGA | BGA; Bulk | TFBGA | BGA; 96-TFBGA | |||
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 96-TFBGA | 1.283V ~ 1.45V | |||
| Access Time | 20 ns | 1.07 ns | 20 ns | 20 ns |
