The MT41K512M4DA-107:K is a DDR3 SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 512 Meg x 4 with a data rate of 1866 MT/s and a CAS latency of 13. The operating voltage is 1.5V ¬±0.075V, and it supports both nominal and dynamic on-die termination for data, strobe, and mask signals. The memory chip is packaged in a 78-ball FBGA format measuring 8mm x 10.5mm. This memory component includes 8 internal banks and offers programmable CAS READ and WRITE latencies, as well as selectable burst lengths of 8 and burst chop of 4. It operates within a temperature range of 0¬8C to 95¬8C and supports self-refresh modes. The refresh count is 8192 cycles, with a refresh period of 64ms at temperatures up to 85¬8C and 32ms from 85¬8C to 95¬8C. Engineers considering this memory chip should evaluate its specifications against their project requirements, particularly in terms of speed, latency, and thermal performance.
Series: *
Categories: Memory
SDRAM - DDR3L Memory IC 2Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5)
IC DRAM 2GBIT PARALLEL 78FBGA
IC DRAM 2GBIT PAR 78FBGA
| Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT41K512M4DA-107:K | MT41K512M4DA-107:K | MT41K512M4DA-107:K | |
| Product Name | Memory - DDR - MT41K512M4DA-107:K | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 20 ns | 20 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) |
