SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
IC DRAM 8GBIT PAR 96FBGA Product overview: MT41K512M16VRN-107 IT:P from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K512M16VRN-1
Manufacturer: Micron Technology Inc.
Mounting Style: SMD
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 8Gb (512M x 16)
Access Time: 20ns
Supplier Device Package: 96-FBGA (8x14)
Temperature Range - Operating: -40°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 96-TFBGA
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,368
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.283V ~ 1.45V
DRAM, 512M X 16BIT, -40 TO 95DEG C; DRAM Type:DDR3; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:933MHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns RoHS Compliant: Yes
SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14)
IC DRAM 8GBIT PARALLEL 96FBGA
IC DRAM 8GBIT PARALLEL 96FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT41K512M16VRN-107IT:P-ND | 774-MT41K512M16VRN-107 IT:P | MT41K512M16VRN-107 IT:P | 80AH8040 | MT41K512M16VRN-107 IT:P | MT41K512M16VRN-107 IT:P | MT41K512M16VRN-107 IT:P | |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - MT41K512M16VRN-107 IT:P | Memory | Dram, 512M X 16Bit, -40 To 95Deg C; Dram Type Micron | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR3L; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | ||
| Package Type | 96-TFBGA | BGA; Tray | 96-TFBGA | TFBGA | BGA; 96-TFBGA | BGA | ||
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | ||
| Access Time | 20 ns | 20 ns | 20 ns | 1.07 ns | 20 ns | 20 ns | 20 ns |
