Micron Technology, Inc. Memory IC and Storage Component MT41K2G4TRF-125:E

Description
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT41K2G4TRF-125:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K2G4TRF-125: E can be used for catalog matching and distributor lookup.
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Description
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT41K2G4TRF-125:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K2G4TRF-125: E can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The MT41K2G4TRF-125:E is an 8Gb TwinDie DDR3L SDRAM memory module from Quarktwin Technology Ltd., designed for low-power applications with a voltage range of 1.283V to 1.45V, and is backward compatible with 1.5V systems. It features a configuration of 128 Meg x 4 with two ranks and eight internal banks per rank, allowing for concurrent operations. The module supports data rates of up to 1600 MT/s with a CAS latency of 11, and has a cycle time of 1.25 ns. Operating temperature ranges from 0¬8C to 95¬8C for commercial applications, with an industrial version available for temperatures between -40¬8C and 95¬8C. The memory is packaged in a 78-ball FBGA format, measuring 9.5mm x 11.5mm x 1.2mm, and is compliant with JEDEC standards. The device also supports 8192 refresh cycles in 64 ms at 0¬8C to 85¬8C and 32 ms at 85¬8C to 95¬8C. This product is suitable for engineers looking for reliable, low-power memory solutions in various applications.

Datasheet Summary
Powered by GS/AI

The MT41K2G4TRF-125:E is an 8Gb TwinDie DDR3L SDRAM memory module from Quarktwin Technology Ltd., designed for low-power applications with a voltage range of 1.283V to 1.45V, and is backward compatible with 1.5V systems. It features a configuration of 128 Meg x 4 with two ranks and eight internal banks per rank, allowing for concurrent operations. The module supports data rates of up to 1600 MT/s with a CAS latency of 11, and has a cycle time of 1.25 ns. Operating temperature ranges from 0¬8C to 95¬8C for commercial applications, with an industrial version available for temperatures between -40¬8C and 95¬8C. The memory is packaged in a 78-ball FBGA format, measuring 9.5mm x 11.5mm x 1.2mm, and is compliant with JEDEC standards. The device also supports 8192 refresh cycles in 64 ms at 0¬8C to 85¬8C and 32 ms at 85¬8C to 95¬8C. This product is suitable for engineers looking for reliable, low-power memory solutions in various applications.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-MT41K2G4TRF-125:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT41K2G4TRF-125:E
Memory IC and Storage Component 774-MT41K2G4TRF-125:E
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT41K2G4TRF-125:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K2G4TRF-125: E can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT41K2G4TRF-125:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K2G4TRF-125:E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT41K2G4TRF-125:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT41K2G4TRF-125:E
Memory - SDRAM - MT41K2G4TRF-125:E
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR3L Memory IC 8Gb (2G x 4) Parallel 800 MHz 13.5 ns 78-FBGA (9.5x11.5) Package: Tray Package: 78-TFBGA Mounting: Surface Mount Part Status: Obsolete Family Name: MT41K2G4 Categories: Integrated Circuits (ICs) Case / Package: 78-FBGA (9.5x11.5) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR3L Memory IC 8Gb (2G x 4) Parallel 800 MHz 13.5 ns 78-FBGA (9.5x11.5)
Package: Tray
Package: 78-TFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT41K2G4
Categories: Integrated Circuits (ICs)
Case / Package: 78-FBGA (9.5x11.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41K2G4TRF-125:E
Integrated Circuits (ICs) - Memory - Memory MT41K2G4TRF-125:E
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site
Memory - MT41K2G4TRF-125:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.5 ns 78-FBGA (9.5x11.5)

SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.5 ns 78-FBGA (9.5x11.5)

Buy Now Datasheet
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT41K2G4TRF-125:E MT41K2G4TRF-125:E MT41K2G4TRF-125:E MT41K2G4TRF-125:E
Product Name Memory IC and Storage Component Memory - SDRAM - MT41K2G4TRF-125:E Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 13.5 ns 13.5 ns 13.5 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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