Micron Technology, Inc. Memory MT41J256M4JP-125:G

Description
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 78-FBGA (8x11.5)
Datasheet
Description
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 78-FBGA (8x11.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT41J256M4JP-125:G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 78-FBGA (8x11.5)

SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 78-FBGA (8x11.5)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41J256M4JP-125:G
Integrated Circuits (ICs) - Memory - Memory MT41J256M4JP-125:G
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT41J256M4JP-125:G MT41J256M4JP-125:G MT41J256M4JP-125:G
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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