Micron Technology, Inc. Memory MT41J256M4JP-125:G

Description
IC DRAM 1GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 78FBGA
Datasheet

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Description
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IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - MT41J256M4JP-125:G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 78-FBGA (8x11.5)

SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 78-FBGA (8x11.5)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41J256M4JP-125:G
Integrated Circuits (ICs) - Memory - Memory MT41J256M4JP-125:G
IC DRAM 1GBIT PARALLEL 78FBGA

IC DRAM 1GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT41J256M4JP-125:G MT41J256M4JP-125:G MT41J256M4JP-125:G
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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